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| HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode HUR60100PT HUR60120PT VRSM V 1000 1200 VRRM V 1000 1200 J K L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=11.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 2 x 30 200 14 1.2 -55...+175 175 -55...+150 165 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 250 1 1.78 2.74 0.9 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 40 5.5 11.4 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR60100PT, HUR60120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 IF 50 Qr 5 C 4 TVJ= 100C VR = 600V IRM 60 A 50 40 TVJ= 100C VR = 600V TVJ=150C 40 TVJ=100C TVJ= 25C 30 20 3 2 IF= 60A IF= 30A IF= 15A 30 20 IF= 60A IF= 30A IF= 15A 1 10 0 0 1 2 3 VF V 4 0 100 10 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 220 ns 200 Fig. 3 Peak reverse current IRM versus -diF/dt 120 V VFR 80 1.2 2.0 TVJ= 100C VR = 600V TVJ= 100C IF = 30A tfr us tfr 0.8 1.5 Kf 1.0 trr 180 IRM 160 IF= 60A IF= 30A IF= 15A 40 VFR 0.4 0.5 Qr 0.0 0 40 80 120 C 160 TVJ 140 120 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 2 1 K/W ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation ..A: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0397 Constants for ZthJC calculation ..AR: 0.01 i 1 2 3 4 0.0001 0.001 0.01 0.1 t s 1 Rthi (K/W) 0.368 0.1417 0.0295 0.5604 ti (s) 0.0052 0.0003 0.0004 0.0092 0.001 0.00001 Fig. 7 Transient thermal resistance junction to case |
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